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| SMD Schottky Barrier Diode RB521G30-G (RoHS Device) Reverse Voltage: 30 Volts Forward Current: 100 mA Features: Small Surface Mounting Type High Reliability E1 L c E2 E b D + - SOD-723 Mechanical Data: Case: Molded plastic SOD-723 Terminals: Solderable per MIL-STD-750, Method 2026.1. Polarity: Indicated by cathode band. Mounting position: Any. Marking: F Symbol A A1 b c D E E1 E2 L Inches A1 A Millimeters Min. Max. 0.021 0.026 0.020 0.023 0.010 0.014 0.003 0.006 0.022 0.026 0.035 0.043 0.051 0.059 0.008 REF 0.003 0.001 7 REF Min. Max. 0.525 0.650 0.515 0.580 0.250 0.350 0.080 0.150 0.550 0.650 1.100 0.900 1.500 1.300 0.200 REF 0.010 0.070 7 REF Maximum Ratings (at TA=25C unless otherwise specified) Parameter DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VR Io IFSM TJ Tstg Limits 30 100 1 125 -40~+125 Unit V mA A C C Electrical Ratings (at TA=25C unless otherwise specified) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.35 10 Unit V A Conditions IF=10mA VR=10V "-G" suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 SMD Schottky Barrier Diode RB521G30-G (RoHS Device) Electrical Characteristic Curves (RB521G30-G) Fig. 1 Forward Characteristics 1 125C Fig. 2 Reverse Characteristics 10m 125C 100m 1m Reverse Current (A) Forward Current (A) 75C 75C 10m 25C 100 10 1 -25C 25C 1m -25C 100 10 1 0 0.1 0.2 0.3 0.4 0.5 0.6 100n 10n 0 5 10 15 20 25 30 35 Forward Voltage (V) Reverse Voltage (V) Fig. 3 Capacitiance between Characteristics Capacitance between Terminals (pF) 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 SOD-723 PAD-SIZE 0.6 mm. 0.7mm. Reverse Voltage (V) 1.2mm. "-G" suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2 |
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